Spatially selective single-grain silicon films induced by hydrogen plasma seeding
نویسندگان
چکیده
The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon has been applied to form single crystalline silicon islands at designed locations. Holes with diameters from 0.4 to 1.8 mm were opened in silicon nitride, and then amorphous silicon films within the holes were exposed to a hydrogen plasma to create microcrystalline seeds. After furnace annealing, the relationship between the size of holes and number of grains in the holes has been investigated. It is found that a single nucleus cannot be induced until the diameter of holes decreases below 0.6 mm. Further annealing enlarges the grain size by lateral growth but does not increase the number of grains in the hole. © 2002 American Vacuum Society. @DOI: 10.1116/1.1469016#
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